Nexperia BCP51,115 BJTs - バイポーラトランジスタ 45 V、1 A PNP 中電力トランジスタ

Width: 3.7 mm

Height: 1.7 mm

Length: 6.7 mm

Technology: Si

Unit Weight: 112 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 63 at 5 mA, 2 V

Gain Bandwidth Product fT: 145 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 45 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 63 at 5 mA, 2 V, 63 at 150 mA, 2 V, 40 at 500 mA, 2 V

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 500 mV