Nexperia BCP56HX BJTs - バイポーラトランジスタ 80 V、1 A NPN 中電力トランジスタ

Technology: Si

Unit Weight: 105.564 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 2.2 W

DC Current Gain hFE Max: 250

Gain Bandwidth Product fT: 155 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 63

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 500 mV