Nexperia NHUMD2F BJTs - バイポーラトランジスタ 80 V、100 mA NPN/PNP 抵抗内蔵ダブルトランジスタ

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 235 mW

Gain Bandwidth Product fT: 150 MHz, 170 MHz

Emitter- Base Voltage VEBO: 10 V

Collector- Base Voltage VCBO: 80 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 70

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 100 mV