Nexperia PBSS3540M,315 BJTs - バイポーラトランジスタ 40 V、0.5 A PNP 低VCEsat（BISS）トランジスタ

Width: 0.62 mm

Height: 0.47 mm

Length: 1.02 mm

Technology: Si

Unit Weight: 0.800 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 430 mW

DC Current Gain hFE Max: 200 at 10 mA, 2 V

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 40 V

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 200 at 10 mA, 2 V, 150 at 100 mA, 2 V, 40 at 500 mA, 2 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 350 mV