Nexperia PBSS4160DSH BJTs - バイポーラトランジスタ 60 V、1 A NPN/NPN 低VCEsatトランジスタ

Technology: Si

Unit Weight: 20 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 700 mW

DC Current Gain hFE Max: 500 at 1 mA, 5 V

Gain Bandwidth Product fT: 220 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 250 at 1 mA, 5 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 200 mV