Nexperia PBSS4250X,115 BJTs - バイポーラトランジスタ 50 V、2 A NPN 低VCEsatトランジスタ

Width: 2.6 mm

Height: 1.6 mm

Length: 4.6 mm

Technology: Si

Unit Weight: 1 g

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 550 mW

DC Current Gain hFE Max: 300 at 100 mA, 2 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 300 at 100 mA, 2 V, 300 at 500 mA, 2 V, 300 at 1 A, 2 V, 150 at 2 A, 2 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 380 mV