Nexperia PBSS5240V,115 BJTs - バイポーラトランジスタ 40 V、2 A PNP 低 VCEsat (BISS) トランジスタ

Width: 1.3 mm

Height: 0.6 mm

Length: 1.7 mm

Technology: Si

Unit Weight: 3 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.2 W

DC Current Gain hFE Max: 300 at 1 mA, 5 V

Gain Bandwidth Product fT: 150 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Maximum DC Collector Current: 1.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 300 at 1 mA, 5 V, 300 at 100 mA, 5 V, 250 at 500 mA, 5 V, 160 at 1 A, 5 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 370 mV