Nexperia PHPT60610PYX BJTs - バイポーラトランジスタ 100 V、2 A NPN 高出力バイポーラトランジスタ

Technology: Si

Unit Weight: 74.700 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 25 W

DC Current Gain hFE Max: 215 at - 500 mA, - 2 V

Gain Bandwidth Product fT: 85 MHz

Emitter- Base Voltage VEBO: 8 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: - 10 A

Maximum DC Collector Current: 10 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 290 mV