Nexperia PHPT610030NK-QX BJTs - バイポーラトランジスタ NPN/NPN 高出力ダブルバイポーラトランジスタ

Technology: Si

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.25 W

Gain Bandwidth Product fT: 125 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 8 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 10 at 3 A, 10 V

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 225 mV