Nexperia PIMT1,115 BJTs - バイポーラトランジスタ NPN/PNP 汎用ダブルトランジスタ

Width: 1.7 mm

Height: 1 mm

Length: 3.1 mm

Technology: Si

Unit Weight: 10.800 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 600 mW

DC Current Gain hFE Max: 120 at 1 mA, 6 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 200 mV