Nexperia PMDXB600UNEZ MOSFETs 20 V、デュアルPチャネルトレンチMOSFET

Fall Time: 51 ns

Rise Time: 9.2 ns

Technology: Si

Unit Weight: 1.200 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 400 pC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 380 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 5.6 ns

Typical Turn-Off Delay Time: 19 ns

Id - Continuous Drain Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1 S

Rds On - Drain-Source Resistance: 3 Ohms, 3 Ohms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 450 mV