NXP BFU730F,115 RF シリコンゲルマニウム NPN ワイドバンド シリコンゲルマニウム RF トランジスタ

Width: 1.35 mm

Height: 0.75 mm

Length: 2.2 mm

Technology: SiGe

Unit Weight: 6.665 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar Wideband

Operating Frequency: 55 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 197 mW

DC Current Gain hFE Max: 555

Emitter- Base Voltage VEBO: 1 V

Collector- Base Voltage VCBO: 10 V

Continuous Collector Current: 5 mA

Maximum DC Collector Current: 30 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 205

Collector- Emitter Voltage VCEO Max: 2.8 V