onsemi BC817-40WT1G BJTs - バイポーラトランジスタ SS SC70 GP XSTR NPN

Technology: Si

Unit Weight: 6 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 460 mW

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 700 mV