onsemi CPH3123-TL-E BJTs - バイポーラトランジスタ スイッチングデバイス

Technology: Si

Unit Weight: 12.670 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 900 mW

Gain Bandwidth Product fT: 390 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 240 mV