onsemi MCH6541-TL-E BJTs - バイポーラトランジスタ 2.5/3.3V 4:1 差動マルチプレクサ

Technology: Si

Unit Weight: 7.700 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 550 mW

DC Current Gain hFE Max: 800, 500

Gain Bandwidth Product fT: 540 MHz, 520 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V, 30 V

Continuous Collector Current: 700 mA, - 700 mA

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 300, 200

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 85 mV, 110 mV