onsemi MMBT2907AM3T5G BJTs - バイポーラトランジスタ SS GP PNP トランジスタ

Width: 0.8 mm

Height: 0.5 mm

Length: 1.2 mm

Technology: Si

Unit Weight: 1.275 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 640 mW

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 600 mA

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 1.6 V