onsemi MMBT3416LT3G BJTs - バイポーラトランジスタ 40 V NPN バイポーラトランジスタ

Width: 1.3 mm

Height: 0.94 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 225 mW

Emitter- Base Voltage VEBO: 4 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 75

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 300 mV