onsemi MMBT4401M3T5G BJTs - バイポーラトランジスタ SOT-723 GP NPN トランジスタ

Width: 0.8 mm

Height: 0.5 mm

Length: 1.2 mm

Technology: Si

Unit Weight: 1.200 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 640 mW

DC Current Gain hFE Max: 20 at 100 uA, 1 V

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 20

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 750 mV