onsemi NSS60200LT1G BJTs - バイポーラトランジスタ LO V PNP トランジスタ 60V 4.0A

Width: 1.3 mm

Height: 0.94 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 540 mW

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 80 V

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 150

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 180 mV