onsemi NSS60200SMTTBG BJTs - バイポーラトランジスタ 60V シングル 2A 低VCE(SAT)

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.8 W

Gain Bandwidth Product fT: 155 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 150

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 365 mV