onsemi NST45010MW6T1G BJTs - バイポーラトランジスタ デュアルマッチド XSTR 45V PNP

Width: 1.25 mm

Height: 0.9 mm

Length: 2 mm

Technology: Si

Unit Weight: 6.200 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 380 mW

DC Current Gain hFE Max: 220 at 2 mA, 5 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 220 at 2 mA, 5 V

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 650 mV