onsemi NSV1C300ET4G BJTs - バイポーラトランジスタ 3 A、100 V 低 VCE(sat) PNP トランジスタ

Technology: Si

Unit Weight: 260.400 mg

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 33 W

DC Current Gain hFE Max: 360

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 140 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 400 mV