onsemi NSV2SA2029M3T5G BJTs - バイポーラトランジスタ SS トランジスタ PNP SOT723

Technology: Si

Unit Weight: 1.275 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 265 mW

DC Current Gain hFE Max: 560

Gain Bandwidth Product fT: 140 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 500 mV