onsemi NSVBC856BM3T5G BJTs - バイポーラトランジスタ PNP バイポーラトランジスタ

Technology: Si

Unit Weight: 1.270 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 265 mW

DC Current Gain hFE Max: 475 at - 2 mA, - 5 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 220 at - 2 mA, - 5 V

Collector- Emitter Voltage VCEO Max: 65 V

Collector-Emitter Saturation Voltage: 300 mV