onsemi NSVBCP68T1G BJTs - バイポーラトランジスタ NPN バイポーラトランジスタ

Width: 3.5 mm

Height: 1.57 mm

Length: 6.5 mm

Technology: Si

Unit Weight: 188 mg

REACH - SVHC: Details

Configuration: Single

Transistor Polarity: NPN

Pd - Power Dissipation: 1.5 W

DC Current Gain hFE Max: 50 at 5 mA, 10 V

Gain Bandwidth Product fT: 60 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 25 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50 at 5 mA, 10 V, 85 at 500 mA, 1 V, 60 at 1 A, 1 V

Collector- Emitter Voltage VCEO Max: 20 V