onsemi NSVBT2222ADW1T1G BJTs - バイポーラトランジスタ NPN バイポーラトランジスタ

Technology: Si

Unit Weight: 7.500 mg

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 150 mW

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 75 V

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 1 V