onsemi NSVMSD1819A-RT1G BJTs - バイポーラトランジスタ NPN バイポーラトランジスタ

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 340

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 500 mV