onsemi NSVS50031SB3T1G BJTs - バイポーラトランジスタ バイポーラトランジスタ 50V 3A 低VCE

Technology: Si

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.1 W

DC Current Gain hFE Max: 560

Gain Bandwidth Product fT: 380 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 175 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 140 mV