onsemi NTBG045N065SC1 SiC MOSFETS シリコンカーバイド (SiC) MOSFET - EliteSiC、31 mohm、650 V、M2、D2PAK-7L

Fall Time: 7 ns

Rise Time: 14 ns

Technology: SiC

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 105 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 121 W

Vgs - Gate-Source Voltage: - 8 V, + 22 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 26 ns

Id - Continuous Drain Current: 62 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 16 S

Rds On - Drain-Source Resistance: 50 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4.3 V