onsemi NTD4804NT4G FET - MOSFET NFET 30V 117A 4MOHM

Width: 6.22 mm

Height: 2.38 mm

Length: 6.73 mm

Fall Time: 8 ns, 5 ns

Rise Time: 20 ns, 19 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 40 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 18 ns, 10 ns

Typical Turn-Off Delay Time: 24 ns, 35 ns

Id - Continuous Drain Current: 117 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 23 S

Rds On - Drain-Source Resistance: 4 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V