onsemi NXH008P120M3F1PG ハーフブリッジ 8MΩ 1200V 40A M3S SiC ハーフブリッジモジュール

Width: 33.8 mm

Height: 12 mm

Length: 48 mm

Fall Time: 12 ns

Rise Time: 17 ns

Technology: SiC

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Typical Delay Time: 17 ns

Transistor Polarity: N-Channel

Pd - Power Dissipation: 382 W

Vgs - Gate-Source Voltage: - 10 V, + 22 V

Typical Turn-On Delay Time: 17 ns

Typical Turn-Off Delay Time: 97 ns

Id - Continuous Drain Current: 145 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 10.9 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 4.4 V