onsemi NXH200T120H3Q2F2SG シリコンカーバイド（SiC）MOSFETおよびモジュール

IGBT Technology: IGBT [Trench/F

IGBT Termination: Solder

Power Dissipation: 679

IGBT Configuration: Three Level In

Transistor Mounting: Through Hole

Transistor Case Style: Module

Operating Temperature Max: 175 °C

Continuous Collector Current: 330

Collector Emitter Voltage Max: 1.2

Collector Emitter Saturation Voltage: 1.86

Datasheet