onsemi NXH600B100H4Q2F2PG IGBTモジュール MASS MARKET GEN3 Q2BOOST プレスフィットピン付き

Technology: SiC, Si

Configuration: Single

Mounting Style: Press Fit

Pd - Power Dissipation: 187.5 mW

Gate-Emitter Leakage Current: 1 uA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1 kV

Collector-Emitter Saturation Voltage: 1.69 V