onsemi SMMBT3906WT1G BJTs - バイポーラトランジスタ 一般用途バイポーラトランジスタ NPNバイポーラトランジスタ

Technology: Si

Unit Weight: 5 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 40 V

Continuous Collector Current: - 200 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 250 mV