PANJIT 2SB1197A_R1_00001 BJTs - バイポーラトランジスタ PNP 低Vce(sat)トランジスタ

Technology: Si

Unit Weight: 8.400 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.25 W

Gain Bandwidth Product fT: 180 MHz

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 203 mV