PANJIT BC847BS_R1_00001 BJTs - バイポーラトランジスタ NPN 一般用途 デュアルトランジスタ VCE45V IC100mA SOT-363

Technology: Si

Unit Weight: 8 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 450

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 600 mV