PANJIT BCP53-16-AU_R2_000A1 BJTs - バイポーラトランジスタ PNP 低Vce(sat)トランジスタ

Technology: Si

Unit Weight: 123 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2.6 W

DC Current Gain hFE Max: 250

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 430 mV