PANJIT MMBT5551W_R1_00701 BJTs - バイポーラトランジスタ NPN 高電圧トランジスタ

Technology: Si

Unit Weight: 5 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 250 V at 10 mA, 5 V

Gain Bandwidth Product fT: 300 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 180 V

Continuous Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 80 V at 10 mA, 5 V

Collector- Emitter Voltage VCEO Max: 160 V

Collector-Emitter Saturation Voltage: 200 mV