PANJIT PTGH7565S1_T0_00201 IGBTトランジスタ 650V/75A 絶縁ゲートバイポーラトランジスタ

Technology: Si

Unit Weight: 6.280 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 366 W

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 225 A

Collector-Emitter Saturation Voltage: 1.65 V

Continuous Collector Current at 25 C: 133 A