Qorvo UJ4C075018K3S SiC FET 750V/18mΩ、SICFET、G4、TO247-3

Fall Time: 21 ns

Rise Time: 56 ns

Technology: SiC

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: Through Hole

Qg - Gate Charge: 37.8 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 385 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 13 ns

Typical Turn-Off Delay Time: 139 ns

Id - Continuous Drain Current: 81 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 23 mOhms

Vds - Drain-Source Breakdown Voltage: 750 V

Vgs th - Gate-Source Threshold Voltage: 6 V