Rectron MMBT5550 BJTs - バイポーラトランジスタ SOT23 NPN 0.6A 160V ハイボルト

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 225 mW

DC Current Gain hFE Max: 250

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 160 V

Continuous Collector Current: 600 mA

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 60

Collector- Emitter Voltage VCEO Max: 140 V

Collector-Emitter Saturation Voltage: 250 mV