Renesas Electronics NP30N04QUK-E1-AY MOSFETs 自動車用 MOS 8P HSON（デュアル）ANL2

Width: 5 mm

Height: 1.45 mm

Length: 5.4 mm

Fall Time: 6 ns

Rise Time: 8 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 27 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 59 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 20 ns

Typical Turn-Off Delay Time: 47 ns

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 175 C

Forward Transconductance - Min: 13 S

Rds On - Drain-Source Resistance: 8 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 4 V