Renesas Electronics NP90N06VDK-E1-AY MOSFETパワートランジスタ Nチャネル オートパワーMOSFET

Width: 6.1 mm

Height: 2.65 mm

Length: 6.5 mm

Fall Time: 6 ns

Rise Time: 7 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Qg - Gate Charge: 63 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 147 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 60 ns

Typical Turn-Off Delay Time: 24 ns

Id - Continuous Drain Current: 90 A

Maximum Operating Temperature: + 175 C

Forward Transconductance - Min: 40 S

Rds On - Drain-Source Resistance: 5.3 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V