ROHM Semiconductor 2SA2018E3TL BJTs - バイポーラトランジスタ PNP, SOT-416, -12V -0.5A, 低VCE(sat)トランジスタ

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 680 at - 10 mA, -2 V

Gain Bandwidth Product fT: 260 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 15 V

Continuous Collector Current: - 500 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 270 at - 10 mA, -2 V

Collector- Emitter Voltage VCEO Max: 12 V

Collector-Emitter Saturation Voltage: 250 mV