ROHM Semiconductor 2SA2071P5T100 BJTs - バイポーラトランジスタ PNP 高速スイッチングトランジスタ

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 2 W

DC Current Gain hFE Max: 270 at - 100 mA, - 2 V

Gain Bandwidth Product fT: 180 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: - 3 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120 at - 100 mA, - 2 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 500 mV