ROHM Semiconductor 2SAR375P5T100R BJTs - バイポーラトランジスタ PNP -1.5A-120V 低周波増幅器

Technology: Si

Unit Weight: 145.820 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 390

Gain Bandwidth Product fT: 280 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: - 1.5 A

Maximum DC Collector Current: 1.5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 120 V

Collector-Emitter Saturation Voltage: 160 mV