ROHM Semiconductor 2SAR522UBTL BJTs - バイポーラトランジスタ GP 増幅トランス

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 560 at - 1 mA, - 2 V

Gain Bandwidth Product fT: 350 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 20 V

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120 at - 1 mA, - 2 V

Collector- Emitter Voltage VCEO Max: 20 V

Collector-Emitter Saturation Voltage: 300 mV