ROHM Semiconductor 2SC4774T106S BJTs - バイポーラトランジスタ NPN 6V 50mA

Width: 1.25 mm

Height: 0.8 mm

Length: 2 mm

Technology: Si

Unit Weight: 5 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 270 at 5 mA, 5 V

Gain Bandwidth Product fT: 800 MHz

Emitter- Base Voltage VEBO: 3 V

Collector- Base Voltage VCBO: 12 V

Continuous Collector Current: 50 mA

Maximum DC Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 180

Collector- Emitter Voltage VCEO Max: 6 V

Collector-Emitter Saturation Voltage: 300 mV