ROHM Semiconductor 2SCR372PT100R BJTs - バイポーラトランジスタ Trans GP BJT NPN 120V 0.7A

Technology: Si

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 390 mA

Gain Bandwidth Product fT: 220 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 120 V

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 120 V