ROHM Semiconductor 2SCR513RTL BJTs - バイポーラトランジスタ Trans GP BJT NPN 50V 1A

Technology: Si

Unit Weight: 164.660 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 450 at 50 mA, 2 V

Gain Bandwidth Product fT: 360 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 180 at 50 mA, 2 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 350 mV